Investigation of the optical gain of compressive-strained quantum well GaInNAs/GaAs structure lasers


A.  Aissat1*, S. Nacer1, M. Bensebti1, J.P. Vilcot2

1 Laboratory LASICOM Faculty of sciences, University Saad Dahlab de Blida Alegria

2 Institut d'Electronique, de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Université des Sciences et Technologies de Lille, Avenue Poincaré, BP 60069, 59652 Villeneuve d'Ascq, FRANCE

* Corresponding author. E-mail:

Received: 11 March 2008; revised version accepted: 16 February 2009



    In this work the band structures of GaxIn1-xNyAs1-y/GaAs compressive strained quantum wells are investigated using 4x4 k.p Hamiltonian including the heavy hole, light hole and spin-orbit splitting bands. The III–V-nitride semiconductor alloys, GaxIn1-xNyAs1-y, operating at optical fibre telecommunications wavelengths around 1.3 µm, attract an increasing amount of attention in the last couple of years not only due to its promising application but also due to its unusual optical and physical properties. By changing the well width, x composition and nitrogen composition (y), the effects of quantum confinement and compressive strain are examined. The transition energy, TE optical gain spectra of three possible quantum well structures emitting at 1.3 or 1.55µm wavelength are given. We also studied the influence of the incorporation of nitrogen in our structure. We note that the increase in nitrogen induced a decrease density of the threshold current.


Keywords: laser diode; quantum wells  GaxIn1-x NyAs1-y /GaAs; optoelectronic; semiconductor.     



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