Determination of Recombination Parameters

in THE BASE OF a bifacial Silicon Solar Cell

under constant multispectral Light

 

F. I. Barro1, A. Seidou Maiga2*, A. Wereme3, G. Sissoko1

1 Laboratoire de Semiconducteurs et d’Energie Solaire, Département de Physique, Faculté des Sciences et Techniques          

Université Cheikh Anta Diop, BP5005, Dakar, SENEGAL

2 Laboratoire d’Electronique, Informatique, Télécommunications et Energies Renouvelables,

UFR de Sciences Appliquées et de Technologie, Université Gaston Berger, BP 234 Saint -Louis SENEGAL

3 Institut de Recherche en Sciences Appliquées et Technologies (IRSAT), CNRST 03 BP 7047 Ouagadougou 03, BURKINA FASO.

* Corresponding author. E-mail: asmaiga@yahoo.com

Received: 22 December 2008; revised version accepted: 16 April 2010

 

Abstract

     Theoretical and experimental investigations of the transient decay have been carried out on a bifacial solar cell placed in a fast-switch-interrupted circuit and submitted to a constant multispectral illumination. The transient decay occurs between two steady states through operating points depending on two variables resistors; this allows us to obtain a transient decay at any operating point of the solar cell    I-V curve (from the short circuit to the open one). Three cases of illumination have been considered: the well known front illumination, the back-side illumination and simultaneous illumination of both front and back-side. From the eigen value ?0 of the fundamental decay mode and the decay time constant, minority carrier lifetime tb, has been computed. Minority carrier diffusion length is deduced and then the junction recombination velocity Sf and the backside recombination velocity Sb are determined. The experimental results are in a good agreement with those obtained from steady state study.

 

keywords: 1- Bifacial; 2- Solar cell; 3- Recombination parameters.

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