A Physical model for gate induced drain leakage current in NMOS transistors at low electrical fields
N. Maouhoub, K. Rais*
Laboratoire d’électronique, d’instrumentation et de traitement du signal
Université Chouaib Doukkali, Faculté des sciences B.P 20, EL Jadida, Maroc
* Corresponding author. E-mail: email@example.com
Received: 24 February 2011; revised version accepted: 09 July 2011
In this work, a physical model for MOSFET gate induced drain leakage current (GIDL) field has proposed witch takes into account of the trap assisted tunneling at low fields and explains a non linearity in Log –Lin Igidl/Fdg2 (1/Fdg) characteristic. The present model is applied on NMOS transistor. We have obtained a good agreement with experimental data.
Keywords: MOS transistor; Tunneling band to band; GIDL; CMOS integrated circuits.