Characterization of In-doped and Ga-doped zinc oxide film deposited by spray pyrolysis
A. Hadri1, C. Nassiri1, F.Z. Chafi1, M. Loghmarti1, M. Tricha2, A. Mzerd1*
1University Mohammed V-Agdal, Faculty of Sciences, Physics Department, LPM, B.P. 1014, Rabat, Morocco
2Hopital Mohammed V d’instruction Militaire. Rabat, Morocco.
* Corresponding author. E-mail: firstname.lastname@example.org
Received: 27 October 2014; revised version accepted: 03 January 2015
Zinc oxide thin films doped with group III elements (In, Ga) are deposited on glass substrates at350 °C by spray pyrolysis technique. X-ray diffraction patterns show that both undoped and doped films exhibit the hexagonal Wurtzite crystal structure with a preferential orientation along  direction, with a shift of (002) peak after group III doping. No additional peak corresponding to secondary phases is observed within the detection limit of the XRD technique. The Energy-Dispersive X-ray spectroscopy results confirmed the presence of In and Ga elements in the doped films. All films present a high transmittance in the visible range with a constant absorption edge. The lowest electrical resistivity is found in the Ga doped zinc oxide.
Keywords: ZnO; IZO; GZO; Spray pyrolysis; Thin films; Hall Effect.