Effect of Magnetic Field on the Hall Coefficient

and Electrical Resistivity

of Insulating Copper Indium Diselenide

L. Essaleh1* , S. M. Wasim2 , J. Galibert3, J. Léotin3

1 Laboratoire d’Etudes Structurales, Electriques et Optiques ( L.E.S.E.O.)

Université Cadi-Ayyad, Faculté des Sciences et Techniques, Département de Physique, Guéliz, B. P. 549, Marrakech, Maroc

2 Centro de Estudios de Semiconductores, Facultad de Ciencias

            1. Universidad de Los Andes, Merida 5101, Venezuela

              3 Laboratoire National des Champs Magnétique Pulsés, 143, Av de Rangueil, BP 14245,

              F-31432, Toulouse Cedex 4, France

              *Author for Correspondence : lessaleh@yahoo.com / lessaleh@fstg-marrakech.ac.ma

              Received : 16 October 2004; revised version accepted : 13 April 2005

                1. Abstract

              We have measured the resistivity r and the Hall coefficient RH in n-CuInSe2 samples with dopant concentration below the critical concentration for the metal insulator transition. Conduction by variable range hopping mechanism have been observed between 4 and 20 K and the effect of the magnetic field on RH and r studied. The Hall mobility µH can be expressed in agreement with the theory of the Hall effect for hopping conduction.

              Keywords : Ternary compound semiconductor, Magnetoresistance, Hall effect and mobility, Hopping conduction

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