TRANSITION ENERGY DETERMINATION OF A STRAINED QUANTUM WELL STRUCTURE BASED ON GaN/AlXGa 1-XN
A. Aissat1*, S. Nacer1, K. Ferdjani1, A. Daoudi1, D. Berkani2
1 LASICOM Laboratory, Faculty of the Engineering Sciences, university Saad Dahlab Blida, ALGERIA
2 ENP School Polytechnic, Algiers, ALGERIA
* Corresponding author E-mail: e-mail: firstname.lastname@example.org
Received: 28 January 2006; revised version accepted:
This work concerns the calculation of quantization energies and the transition energy of a strained quantum well structure based on GaN/AlxGa1-xN. The strain resulting from the difference of the lattice parameters (which depends on the aluminum and gallium composition) and the active area width have a significant influence on the process of electrons holes recombination.
Keywords: Laser Diode; Quantum Wells; Strain; GaN/AlGaN.