TRANSITION ENERGY DETERMINATION OF A STRAINED QUANTUM WELL STRUCTURE BASED ON GaN/AlXGa 1-XN

 

A. Aissat1*, S. Nacer1,  K. Ferdjani1,  A.  Daoudi1, D. Berkani2

1 LASICOM Laboratory, Faculty of the Engineering Sciences, university Saad Dahlab Blida, ALGERIA

2 ENP School Polytechnic, Algiers, ALGERIA

* Corresponding author E-mail: e-mail: sakre23@yahoo.fr

Received: 28 January 2006; revised version accepted:

 

Abstract

     This work concerns the calculation of quantization energies and the transition energy of a strained quantum well structure based on GaN/AlxGa1-xN. The strain resulting from the difference of the lattice parameters (which depends on the aluminum and gallium composition) and the active area width have a significant influence on the process of electrons holes recombination.

 

Keywords: Laser Diode; Quantum Wells; Strain; GaN/AlGaN.

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