POROSITY AND YOUNG’S MODULUS OF POROUS SILICON
K. Rahmoun1,2,*, F.Z. Otmani1, C. Mathieu2, N.E. Chabane Sari1
1Unité de Recherche de Matériaux et Energies Renouvelables (U.R.M.E.R).
Université Abou Bakr Belkaïd, BP119 Tlemcen 13000, Algérie
*Corresponding author . E-mail: firstname.lastname@example.org
2Université d’Artois, Faculté Jean Perrin, rue Jean Souvraz- S.P.18- 62307 Lens Cedex, France
* Corresponding author. E-mail: email@example.com
Received: 26 June 2008; revised version accepted: 05 August 2008
Porous silicon (PS) is nowadays one of the most studied materials, and his use is becoming larger. Each type of application needs a given morphology.
The porosity is an essential component in the study of PS structural properties. It depends on the silicon wafer nature (doping and orientation) and preparation condition: concentration of hydrofluoric acid, anodisation time, current density and anodisation temperature.
In our study, we show that the Young’s modulus depends strongly on the porosity. It decreases with the increase of this later.
Keywords: porous silicon; porosity; elastic properties; Young’s modulus.