Comparisons of the calculated and experimental results

of the ionization coefficients in Ga1-xAlxSb, 0 < x < 0.04

 

A. Rmou1*, Y. Elamraoui1, E. Skouri2

1 Laboratoire de Physique Statistique et Modélisation des Systèmes. Faculté des Sciences et Technique d’Errachidia

Département De Physique. BP: 509,  Boutalamine. 52000  Errachidia,  MAROC.

2 Faculté des Sciences Ibnou Zohr. Département de physique. BP: 56 Dakhla. Agadir. MAROC

* Corresponding author. E-mail: rmouab@hotmail.fr

Received: 22 December 2008; revised version accepted: 20 February 2009

 

 

Abstract

     The calculation of the ionization coefficient of electrons of the first conduction band in Ga1-xAlxSb and the ionization coefficient of holes of the split-off valence band have been made for various compounds x =0%; 2%; 4%, in the electric field range of our experimental results F:16.104 < F < 32.104 V/cm and at room temperature (T=300 K). The drift velocity and the distribution function have been calculated by the Monte Carlo simulation, taking into account the electric field variation, scattering process, and alloy disorder effect. Comparison between calculated and experimental results is made. It’s shown a very good agreement between calculated and experimental values for x =0; x= 0.02, and x=0.04. The ratio of ionization coefficient of holes to ionization coefficient of electrons is in the range of two magnitudes and exhibit a maximum for x= 0.02 corresponding to D/Eg˜1, where D is the split-off energy and Eg the energy gap. This result are concordant with the theory of resonance effect of Hildebrand.

 

Keywords: Ga1-xAlxSb; Semiconductors III-V; Impact ionization coefficient; Monte Carlo simulation.

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