Optical and electrical properties of ZnTe thin films
H. Bellakhder*, A. Outzourhit and E. L. Ameziane.
Laboratoire de Physique des Solides et des Couches Minces, Faculté des Sciences Semlalia,
B.P. 2390, Marrakech (Morocco)
* Corresponding author. E-mail :Bellakhder@ucam.ac.ma
Received 20 November 2000
ZnTe were deposited by rf sputtering onto glass substrates. Their structural (x-ray diffraction) and optical properties (transmittance, and absorption coefficient) were experimentally measured. The absorption coefficients of the as-deposited films were analyzed in light of the Dow and Redfield model. The analysis enabled the determination of the inter-grain barrier heights, the density of traps, and the density of donors.
Keywords : Thin films; ZnTe; Grain boundary; Potential barriers.