Optical and electrical properties of ZnTe thin films

H. Bellakhder*, A. Outzourhit and E. L. Ameziane.

Laboratoire de Physique des Solides et des Couches Minces, Faculté des Sciences Semlalia,

B.P. 2390, Marrakech (Morocco)

* Corresponding author. E-mail : Bellakhder@ucam.ac.ma

Received 20 November 2000


ZnTe were deposited by rf sputtering onto glass substrates. Their structural (x-ray diffraction) and optical properties (transmittance, and absorption coefficient) were experimentally measured. The absorption coefficients of the as-deposited films were analyzed in light of the Dow and Redfield model. The analysis enabled the determination of the inter-grain barrier heights, the density of traps, and the density of donors.

Keywords : Thin films; ZnTe; Grain boundary; Potential barriers.

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