Buffer layer effect on the morphological

and optical properties of GaN

Z. Benzarti, I. Halidou, Z. Chine, T. Boufaden, B. El Jani*

Laboratoire de Physique des Matériaux, Faculté des Sciences, 5000 Monastir, Tunisie.

* Corresponding author. E-mail address: belgacem.eljani@fsm.rnu.tn

Received : 13 July 2001; revised version accepted 03 October 2001


GaN and AlN have been used as buffer layers for the growth of GaN in atmospheric pressure metalorganic vapor phase epitaxy (APMOVPE) on (0001) sapphire substrates. The growth was in-situ controlled by laser reflectometry (LR). The optimum thickness and deposition temperature of the GaN buffer layer was found to be 30nm and 600°C, respectively. Whereas those of AlN buffer layer were 11.5nm and 800°C. A comparative study between the epilayers grown on the two-types buffers is done. The surface morphology and the optical properties for the epilayers were analyzed by the optical microscope and low temperature photoluminescence (PL).

Keywords: MOVPE; Reflectometry; Buffer layer; Morphology.

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