Courant d'obscurité

dans les photodétecteurs INFRAROUGES GaAlAs/GaAs

A. Almaggoussi1*, K. Zekentes2, M. Androulaki2, E. Aperathisis2, B. Yous1

1Groupe d’Etude des Matériaux Optoélectroniques (G.E.M.O.). Département de Physique, F.S.T.G.

B.P. 618, Marrakech, Maroc

2Foundation for Research and Technology-Hellas (FORTH) / I.E.S.L Microelectronics

Research Group Vassilika Vouton, P.O. Box 1527, 711 10 Heraklion, Crete, Greece

* Corresponding author. E-mail: almaggoussi@fstg-marrakech.ac.ma

Received : 18 Octobre 2001; revised version accepted :04 February 2002

Abstract

Dark current in GaAlAs/GaAs quantum wells of 50 layers grown by MBE is studied. These heterostructures are of great interest in the region of 8 -10 mm. The envelope function formalism is used to calculate the transition energies. Dark current measurements were made in the temperature range of 77 K to 300 K. A model based on thermoionic emission is used for both the experimental determination of transition energies and the interpretation of thermal activation results.

Keywords: Multiquantum wells GaAlAs/GaAs; Photodetectors; Intersubband transitions; Dark current; Thermoionic emission.

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