Elaboration et caractérisation
de la Structure SnO2/Si(PS)
R. Outemzabet*, N. Kesri
Laboratoire de Semiconducteurs, Institut de Physique
1U.S.T.H.B.,Bab-Ezzouar,B.P. 32, Alger, Algérie
* Corresponding author. E-mail :email@example.com
Received 20 November 2001; revised version accepted :11 February 2002
Theaim of this work is to fabricate SnO2/Si(PS) structures. Porous silicon (PS) layers are formed by anodisation of silicon in a hydrofluoric acid solution. N type silicon samples are macroporous and p type are microporous. On the top of the silicon substrate, a thin transparent tin dioxide layer SnO2 is deposited by chemical vapor deposition (CVD), at various deposition temperatures ranging from 350°C to 420°C. The back surface of the wafers as being metallised before the anodisation procees we electrically characterize these structures from the courant-tension characteristic for different anodisation and deposition conditions.
Keywords: Porous silicon; Tin dioxide; CVD method.