MONTE CARLO Simulation of the charge

implantatED in an insulating target.


R. Renoud*, F. Mady, J-P. Ganachaud

LPIO/LPST (EA 3254), Faculté des Sciences et des Techniques, Université de Nantes,

2 rue de la Houssinière, 44322 Nantes cedex 3, France

* Corresponding author. E-mail :

Received : 30 April 2002; revised version accepted : 23 July 2002


We simulate the implantation of a negative charge by an electron beam of a few keV in an insulating target. For that, we use the theoretical electron-insulator interaction model we have formerly developed. Due to the charging effects, the effective energy of the primary beam decreases continuously together with the surface potential of the target. The dynamics of the building up of the charge distribution is principally governed by the self-regulation effects of the secondary emission yield. We analyse the shape of the implanted distribution and its dependence on the primary energy and on the density of the sites where the excited charge carriers can trap. Our conclusions are used to propose a model to interpret the results of typical electrostatic mirror experiments. Interesting information can thus be obtained on the extension of the implanted distribution and on the density of traps.

Keywords: Insulators; Charge carriers: generation, recombination, and trapping; Space-charge effect; Electron impact: secondary emission.

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