EFFECT OF HYDROGENATION

ON THE ELECTRICAL PROPERTIES OF n-CdTe DEFORMED CRYSTALS

K. Guergouri*, N. Brihi

Laboratoire de Physique-chimie des Semiconducteurs, Département de Physique,

Faculté des Sciences, Université Mentouri ,25000 Constantine, Algérie

* Corresponding author. E-mail : guergouri@ caramail.com

Received : 03 May 2002; revised version accepted : 23 January 2003

Abstract

The effect of hydrogenation on the electrical properties of n-CdTe deformed crystals on several Cd (111) and faces was investigated by means of I(V) and C(V) measurements. To create fresh dislocations a plastic deformation, at room temperature, by the help of Vickers microhardness was carried out. It was found that hydrogen annealing treatment of deformed crystal leads to the same difference, occurring before indentation, between the two faces, in terms of density of surface states and leakage current and to an increase of the donor concentration. Finally the analysis of the results confirms that the majority defect on each face is the tellurium vacancy (VTe).

Keywords: n-CdTe, dislocations, hydrogenation, I(V) and C(V).

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