PREPARATION OF CuInSe2 THIN FILMS BY ELECTRODEPOSITION

IN A POORLY BUFFERED SOLUTION

E. S. Bel Hadj Hmida, M. Dachraoui*

Laboratoire de Chimie Analytique et d’Electrochimie, Faculté des Sciences de Tunis, Campus Universitaire, 1060 Tunis, Tunisie

* Corresponding author. E-mail : m.dachraoui@planet.tn

Received : 27 March 2002; revised version accepted : 25 May 2002

Abstract

CuInSe2 thin films were prepared by electrodeposition from a solution with the pH fixed by a mixture of sulfuric acid and sodium sulfate. Layers with more selenium and less indium were obtained. This result is attributed to a partial transformation of the In3+ ions in InOH2+ ions in the vicinity of the electrode- solution interface, due to a local pH increase caused by the reduction of the selenious acid. The local pH variation may also be considered as a tool to modulate the selenium content of the films.

Keywords: Thin layers; Electrodeposition; CIS; Buffer solution; Gap.

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